A computer model of a chemical vapor deposition reactor for the production of silicon carbide coatings was developed. Silane and Ammonia gases react at low pressure and moderate temperature so as to deposit a solid silicon nitride coating on the surface of a heated substrate. The numerical model predicts the temperature, velocity, and concentration profiles in the CVD reactor as well as the deposition rate of the solid silicon nitride on the substrate surface. As a consequence of the low pressures employed some allowance was made for slip and jump boundary conditions at the solid surfaces.
This work was performed in collaboration with an experimental group at the University of Alabama at Tuscaloosa.
" A Mathematical Model of the Chemical Vapor Deposition of Silicon Nitride", Joseph M. Lynch, M.S. Thesis, 1987, Dept. of Mechanical Engineering, University of Lowell.
© 1996, J. McKelliget